Nonvolatile semiconductor memory device which can be...

Details Nonvolatile semiconductor memory device which can be... Nonvolatile semiconductor memory device which can be...

2005-05-31

2005-05-31

Elms, Richard (Department: 2824)

Static information storage and retrieval

Addressing

Sync/clocking

C365S189030, C365S210130

Reexamination Certificate

active

06901025

ABSTRACT:
In a read operation, for example, 32 sense amplifiers read 32 pieces of data in a group. After that, the read data is outputted on a 4-bit unit basis. A memory cell array operates at a low frequency which is ⅛ of an actual data output frequency. On the other hand, in a write operation, data is transferred from the outside to a semiconductor memory device bit by bit every cycle. Consequently, by providing a number of latches of a pipeline in a write access path, the writing operation is enabled even at a high frequency. Specifically, at the time of reading, a memory array operates at a low frequency which is ⅛ of a data output frequency. At the time of writing, data is written every clock.

REFERENCES:
patent: 6347056 (2002-02-01), Ledford et al.
patent: 6392957 (2002-05-01), Shubat et al.
patent: 6643204 (2003-11-01), Agrawal
patent: 5-342118 (1993-12-01), None

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory device which can be... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device which can be..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device which can be... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3413825