Nonvolatile semiconductor memory device to which information...

Details Nonvolatile semiconductor memory device to which information... Nonvolatile semiconductor memory device to which information...

2008-03-18

2008-03-18

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read only systems

Fusible

C365S225700, C365S200000

Reexamination Certificate

active

11231983

ABSTRACT:
A nonvolatile semiconductor memory device having a storage element which is programmed with information by breaking an insulating film of the storage element, includes a cell array including a plurality of storage cells arranged in matrix, each of the storage cells having the storage element and a selection switch connected in series to the storage element, and a row selection control circuit which activates a row selection line connected to a given number of storage cells. The device further includes a write control circuit which controls a voltage of each of data lines bit by bit in accordance with write data, the data lines being connected to a given number of storage cells connected to the row selection line activated by the row selection control circuit.

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Hiroshi Ito, et al., “Pure CMOS One-time Programmable Memory using Gate-OxAnti-fuse”, IEEE Custom Integrated Circuits Conference, 2004, pp. 469-472.
U.S. Appl. No. 11/231,795, filed Sep. 22, 2005, Nakayama et al.
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