Nonvolatile semiconductor memory device that erases stored...

Details Nonvolatile semiconductor memory device that erases stored... Nonvolatile semiconductor memory device that erases stored...

2007-10-09

2007-10-09

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185290

Reexamination Certificate

active

11087735

ABSTRACT:
A nonvolatile semiconductor memory device is characterized by including a memory cell to store data, a first reference cell, a check circuit to check a threshold of the first reference cell, and an erase circuit to erase the data of the memory cell in response to detection by the check circuit that the threshold of the first reference cell is smaller than or substantially equal to a predetermined fixed value.

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Tatsuya Usuki et al; “Advantage of a Quasi-Nonvolatile Memory with Ultra Thin Oxide”; Abstract of International Conference on Solid State Devices and Materials; 2001, The Japan Society of Applied Physics, p. 532.

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