Nonvolatile semiconductor memory device supplying proper...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185110, C365S185180

Reexamination Certificate

active

07012838

ABSTRACT:
A nonvolatile semiconductor memory device includes a plurality of blocks each having a nonvolatile memory cell array, and a program potential generating circuit which supplies a program potential to the nonvolatile memory cell array, wherein the program potential generating circuit adjusts the program potential according to a first address signal selecting one of the blocks and a second address signal indicating a position of a write-accessed memory cell in the noted one of the blocks.

REFERENCES:
patent: 5337281 (1994-08-01), Kobayashi et al.
patent: 5798966 (1998-08-01), Keeney
patent: 6680865 (2004-01-01), Watanabe
patent: 6751133 (2004-06-01), Kurosaki
patent: 11-297086 (1999-10-01), None

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