Nonvolatile semiconductor memory device including plural...

Details Nonvolatile semiconductor memory device including plural... Nonvolatile semiconductor memory device including plural...

2011-03-01

2011-03-01

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185180, C365S210130

Reexamination Certificate

active

07898867

ABSTRACT:
A nonvolatile semiconductor memory device having a plurality of electrically rewritable nonvolatile memory cells connected in series together includes a select gate transistor connected in series to the serial combination of memory cells. A certain one of the memory cells which is located adjacent to the select gets transistor is for use as a dummy cell. This dummy cell is not used for data storage. During data erasing, the dummy cell is applied with the same bias voltage as that for the other memory cells.

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