Nonvolatile semiconductor memory device including NAND-type...

Details Nonvolatile semiconductor memory device including NAND-type... Nonvolatile semiconductor memory device including NAND-type...

2009-01-16

2010-12-28

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185050, C365S185120, C365S185020

Reexamination Certificate

active

07859898

ABSTRACT:
A nonvolatile semiconductor memory device is provided with a memory cell array, a judgment potential correction circuit, and a readout circuit. In the memory cell array, a plurality of memory cells are arranged in a matrix form, and the array includes a first memory cell as a readout object and a second memory cell disposed adjacent to the first memory cell. The judgment potential correction circuit corrects a judgment potential based on a threshold value of the second memory cell. The readout circuit reads the first memory cell as the readout object by use of the corrected judgment potential.

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U.S. Appl. No. 12/491,638, filed Jun. 25, 2009, Futatsuyama et al.
U.S. Appl. No. 12/564,598, filed Sep. 22, 2009, Sato et al.

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