Nonvolatile semiconductor memory device including high...

Details Nonvolatile semiconductor memory device including high... Nonvolatile semiconductor memory device including high...

2007-01-16

2007-01-16

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185010, C365S185130, C365S185190, C365S185220

Reexamination Certificate

active

10941028

ABSTRACT:
The PROM area is adjacent to the normal memory cell area. The data writing (normal writing) and the data reading (normal reading) for normal memory cell areas and the data writing (redundant writing) for the PROM area are carried out from the side of the normal memory cell areas. The data reading (redundant reading) for the PROM area is carried out from the side of the PROM area. In the PROM area, the PROM cells having the same structure as that of the normal memory cells are connected to the redundant sub bit lines. In the redundant writing, in the select gate area, the redundant sub bit lines and main bit lines are connected. In the redundant reading, in the redundant gate area having the same layout as that of the select gate area, the redundant sub bit lines are connected to redundant bit lines.

REFERENCES:
patent: 6215699 (2001-04-01), Yamamoto
patent: 6868008 (2005-03-01), Kamei et al.
patent: 8-249900 (1996-09-01), None
patent: 10-241396 (1998-09-01), None

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