Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2007-10-30
2007-10-30
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185200, C365S185230, C365S230060, C365S225500
Reexamination Certificate
active
11244287
ABSTRACT:
A semiconductor device includes a memory cell and driver. The memory cell has a cell transistor which has one end of a current path connected to a bit line and stores data by storing charges in a floating gate, and a selector gate transistor which has one end of a current path connected to the other end of the current path of the cell transistor and the other end of the current path connected to a source line. The driver is configured to apply, to the control gate of the cell transistor in read, a potential of the same sign as that of a potential applied to the gate of the selector gate transistor.
REFERENCES:
patent: 6950356 (2005-09-01), Tao
patent: 7-73688 (1995-03-01), None
U.S. Appl. No. 11/244,287, filed Oct. 6, 2005, Shuto.
U.S. Appl. No. 11/248,303, filed Oct. 13, 2005, Hasegawa et al.
Ton Ditewig, et al., “An Embedded 1.2V-Read Flash Memory Module in a 0.18 μm Logic Process”, 2001 IEEE International Solid-State Circuits Conference Digest, Session 2, Non-Volatile Memories, 2.4, Feb. 5, 2001, pp. 34-35, 425.
Luu Pho M.
Phung Anh
LandOfFree
Nonvolatile semiconductor memory device in which write and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory device in which write and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device in which write and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3823477