Nonvolatile semiconductor memory device having uniform...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185230, C365S185090

Reexamination Certificate

active

11317300

ABSTRACT:
A NAND-type nonvolatile semiconductor memory device comprising a cell string that comprises a dummy cell interposed between and connected in series to a string selection transistor and a nonvolatile memory cell is provided. The NAND-type nonvolatile semiconductor memory device further comprises a dummy word line driver adapted to activate a dummy word line to gate the dummy cell.

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patent: 5524094 (1996-06-01), Nobukata et al.
patent: 7079437 (2006-07-01), Hazama et al.
patent: 2002/0118588 (2002-08-01), Kato
patent: 2004/0113199 (2004-06-01), Toshiba
patent: 2005/0180213 (2005-08-01), Abe et al.
patent: 2004127346 (2004-04-01), None
patent: 1019940006684 (1994-07-01), None
patent: 1020000007429 (2000-02-01), None

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