Nonvolatile semiconductor memory device having electric field bu

Details Nonvolatile semiconductor memory device having electric field bu Nonvolatile semiconductor memory device having electric field bu

1995-09-07

1996-07-30

Nelms, David C.

Static information storage and retrieval

Floating gate

36518524, 36518526, 36518529, 437 43, G11C 700, H01L 21265

Patent

active

055418775

ABSTRACT:
Disclosed is an electrically erasable nonvolatile semiconductor memory device having a floating gate electrode formed on a semiconductor substrate through a first gate insulating film, a control gate electrode formed on the floating gate electrode through a second gate insulating film, and source and drain regions spaced apart from each other under the floating gate electrode so as to partially overlap the floating gate electrode, wherein an electric field buffering means for relaxing an electric field generated between a peripheral portion of an element isolation region and an end portion of the floating gate electrode in application of an erase voltage is selectively formed as a lightly doped region in a source region surface portion of the peripheral portion of the element isolation region.

REFERENCES:
patent: 5153144 (1992-10-01), Komori et al.

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