Nonvolatile semiconductor memory device having assist gate

Details Nonvolatile semiconductor memory device having assist gate Nonvolatile semiconductor memory device having assist gate

2006-04-27

2008-10-07

Phan, Trong (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185170, C365S185250, C365S063000, C365S203000, C365S230030

Reexamination Certificate

active

07433230

ABSTRACT:
In this AG-AND type flash memory, a layered bit line configuration where a memory array is divided into a plurality of sub blocks, new main bit lines are allocated so as to correspond to each sub block, and a main bit line is selectively connected to a global bit line in an upper layer via a switch is adopted, so that charge sharing write-in is carried out between two main bit lines. Accordingly, write-in of data into the flash memory can be carried out with low power consumption, and the threshold voltage can be controlled with precision.

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