Nonvolatile semiconductor memory device having a plurality of bl

Details Nonvolatile semiconductor memory device having a plurality of bl Nonvolatile semiconductor memory device having a plurality of bl

1997-05-07

1998-12-08

Le, Vu A.

Static information storage and retrieval

Floating gate

Particular biasing

36518511, 36518527, 365200, 36523003, G11C 700

Patent

active

058479953

ABSTRACT:
The inventive DINOR flash memory includes a plurality of blocks, a spare block and a spare word line block, which are formed on a plurality of electrically isolated P-type wells. When a word line-to-well short-circuit takes place in a certain block and another block is selected, the block causing the word line-to-well short-circuit is brought into a non-selected state. Thus, no leakage takes place in the block causing the word line-to-well short-circuit, to exert no bad influence on the selected block.

REFERENCES:
patent: 5477499 (1995-12-01), Van Buskirk et al.
patent: 5561620 (1996-10-01), Chen et al.
patent: 5621690 (1997-04-01), Jungroth et al.

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