Nonvolatile semiconductor memory device for storing multi-value

Details Nonvolatile semiconductor memory device for storing multi-value Nonvolatile semiconductor memory device for storing multi-value

1996-05-15

1997-12-02

Nelms, David C.

Static information storage and retrieval

Floating gate

Multiple values

36518508, 36518524, G11C 2700

Patent

active

056943571

ABSTRACT:
Each of the cell transistors which constitute an EEPROM is set one of the first to fourth threshold voltages, to store one of four different data items. The first and fourth threshold voltages are the lowest and the highest of the four, respectively, and the second threshold voltage is lower than the third threshold voltage. Each cell transistor is set at a neutral threshold voltage when the charge-accumulating layer accumulates no charge. The neutral threshold voltage is higher than the second threshold voltage and lower than the third threshold voltage. The difference between the neutral threshold voltage and one of the four threshold voltages is so small that the self-field of the cell transistor has a low intensity.

REFERENCES:
patent: 4627027 (1986-12-01), Rai et al.
patent: 5043940 (1991-08-01), Harari
Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 327-330.
International Electron Devices Meeting, 1990, San Francisco, CA, Dec. 9-12, 1990.

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