Nonvolatile semiconductor memory device containing reference...

Details Nonvolatile semiconductor memory device containing reference... Nonvolatile semiconductor memory device containing reference...

2007-01-23

2007-01-23

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S210130

Reexamination Certificate

active

10922906

ABSTRACT:
A plurality of dummy cells which generate reference potential corresponding to a capacitance of a bit line each have a floating gate, control gate and first and second diffusion layers. The first and second diffusion layers of each dummy cell are commonly connected by use of a wiring.

REFERENCES:
patent: 5105385 (1992-04-01), Ohtsuka et al.
patent: 5157626 (1992-10-01), Watanabe
patent: 5841719 (1998-11-01), Hirata
patent: 5898614 (1999-04-01), Takeuchi
patent: 6396740 (2002-05-01), Chih et al.
patent: 6819615 (2004-11-01), Fastow et al.
patent: 7-15952 (1995-02-01), None
patent: 9-320283 (1997-12-01), None
patent: 2003-22680 (2003-01-01), None

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory device containing reference... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device containing reference..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device containing reference... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3733227