Nonvolatile semiconductor memory device capable of storing multi

Details Nonvolatile semiconductor memory device capable of storing multi Nonvolatile semiconductor memory device capable of storing multi

1998-08-07

2000-04-25

Nelms, David

Static information storage and retrieval

Floating gate

Multiple values

36518522, 36518517, G11C 1134

Patent

active

06055181&

ABSTRACT:
A nonvolatile semiconductor memory device includes a memory cell including a charge storage section for storing n-value data (n.gtoreq.3). In this device, the charge storage section has discrete first to n-th charge amount regions for storing the n-value data. If the first to n-th charge amount regions are defined as n-th, (n-1)-th, . . . , (i+1)-th, i-th charge amount regions in descending order of an amount of positive or negative charge stored in the charge storage section, a charge amount difference .DELTA.Mj between a j-th charge amount region and a (j-1)-th charge amount region is set to .DELTA.Mn>.DELTA.Mn-1> . . . >.DELTA.Mi+2>.DELTA.Mi+1.

REFERENCES:
patent: 5434825 (1995-07-01), Harari
patent: 5450341 (1995-09-01), Sawada et al.
patent: 5521865 (1996-05-01), Ohuchi et al.
patent: 5570315 (1996-10-01), Tanaka et al.

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