Static information storage and retrieval – Floating gate – Disturbance control
Reexamination Certificate
2005-08-09
2005-08-09
Tran, Andrew Q. (Department: 2824)
Static information storage and retrieval
Floating gate
Disturbance control
C365S185030, C365S185170
Reexamination Certificate
active
06927998
ABSTRACT:
A semiconductor device with a non-volatile memory, having: first to fourth memory cells arranged in a first direction; a first bit line extending over the first memory cell in a second direction and connected to the second memory cell; a second bit line extending over the second memory cell in the second direction and connected to the first memory cell; a third bit line extending over the third memory cell in the second direction and connected to the third memory cell; and a fourth bit line extending over the fourth memory cell in the second direction and connected to the fourth memory cell.
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Shirota Riichiro
Takeuchi Yuji
Kabushiki Kaisha Toshiba
Tran Andrew Q.
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