Nonvolatile semiconductor memory device capable of improving of

Details Nonvolatile semiconductor memory device capable of improving of Nonvolatile semiconductor memory device capable of improving of

1998-02-09

1999-07-27

Nguyen, Tan T.

Static information storage and retrieval

Floating gate

Particular connection

36518522, G11C 1600

Patent

active

059301694

ABSTRACT:
Electrically erasable and writable nonvolatile memory cells are arranged. After erasing the data in at least part of the memory cells, light-writing is done by applying, to the memory cells erased from, a bias whose pulse width is shorter or whose write voltage is lower than in an ordinary write operation. Then, a property-degraded cell which is in a written state is detected from among the memory cells subjected to light-writing. Because the property-degraded cell can be found in this way, the lifetime of the chip can be improved by, for example, replacing the defective cell with a normal cell.

REFERENCES:
patent: 5278794 (1994-01-01), Tanaka et al.
patent: 5361227 (1994-11-01), Tanaka et al.
patent: 5452248 (1995-09-01), Naruke et al.
patent: 5530675 (1996-06-01), Hu
patent: 5608672 (1997-03-01), Tang et al.
patent: 5657270 (1997-08-01), Ohuchi et al.
patent: 5699298 (1997-12-01), Shiau et al.
patent: 5856944 (1999-01-01), Prickett, Jr. et al.

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory device capable of improving of does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device capable of improving of , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device capable of improving of will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-886821