Nonvolatile semiconductor memory device capable of...

Details Nonvolatile semiconductor memory device capable of... Nonvolatile semiconductor memory device capable of...

2005-06-07

2005-06-07

Ho, Hoai (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185230, C365S185280, C365S185330, C365S191000, C365S201000

Reexamination Certificate

active

06903980

ABSTRACT:
A nonvolatile semiconductor memory device includes a memory cell array which includes nonvolatile memory cells, and a control circuit which responds to a first command by performing a first batch erasure with respect to a selected group of the memory cells, and responds to a second command by performing a second batch erasure with respect to the selected group of the memory cells, the first batch erasure including preprogramming, erasure, and over-erasure correction in this sequence, and the second batch erasure including over-erasure correction, preprogramming, erasure, and over-erasure correction in this sequence.

REFERENCES:
patent: 6496417 (2002-12-01), Shiau et al.
patent: 6711056 (2004-03-01), Abedifard et al.
patent: 6847565 (2005-01-01), Abedifard et al.
patent: 2001/0043492 (2001-11-01), Lee et al.
patent: 2003/0021155 (2003-01-01), Yachareni et al.
patent: 2003/0072182 (2003-04-01), Keays
patent: 2003/0074152 (2003-04-01), Kessenich et al.
patent: 2003/0206435 (2003-11-01), Takahashi
patent: 2005/0028053 (2005-02-01), Roohparvar

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