Nonvolatile semiconductor memory device and write/verify...

Details Nonvolatile semiconductor memory device and write/verify... Nonvolatile semiconductor memory device and write/verify...

2007-06-26

2007-06-26

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185240, C365S185110, C365S189080

Reexamination Certificate

active

11242897

ABSTRACT:
A nonvolatile semiconductor memory device includes write/verify circuits, a switching elements which divides the bit lines into plural portions, and a control circuit. The control circuit is configured to control the write/verify circuits and switching elements. The control circuit performs a control operation to perform the write and verify operations with the switching elements set in an OFF state when a memory cell of an address to be written lies on the write/verify circuit side in the memory cell array, write and save data into a memory cell lying on the write/verify circuit side with the switching elements set in the OFF state when the memory cell lies farther apart from the write/verify circuit than the switching elements, and then turn ON the switching elements while the write/verify circuit is not being operated and write the saved data into a memory cell of an address to be written.

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patent: 2004/0213045 (2004-10-01), Nakai
patent: 8-87895 (1996-04-01), None

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