Nonvolatile semiconductor memory device and usage method...

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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C365S185180, C365S185260

Reexamination Certificate

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08000137

ABSTRACT:
A nonvolatile semiconductor memory device includes a first PMOS transistor and a second PMOS transistor having a gate, the first and the second PMOS transistors being connected in series; and a first NMOS transistor and a second NMOS transistor having a gate, the first and the second NMOS transistors being connected in series; wherein the gate of the second PMOS transistor and the gate of the second NMOS transistor are commonly connected and floated.

REFERENCES:
patent: 4740713 (1988-04-01), Sakurai et al.
patent: 5270587 (1993-12-01), Zagar
patent: 5594687 (1997-01-01), Lin et al.
patent: 5745417 (1998-04-01), Kobayashi et al.
patent: 5898606 (1999-04-01), Kobayashi et al.
patent: 6215701 (2001-04-01), Yao et al.
patent: 6414872 (2002-07-01), Bergemont et al.
patent: 7221596 (2007-05-01), Pesavento et al.
patent: 7447064 (2008-11-01), Bu et al.
patent: 2008/0019162 (2008-01-01), Ogura et al.
patent: 1986-172435 (1986-08-01), None
patent: 2006-066529 (2006-03-01), None
patent: 2008-047274 (2008-02-01), None

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