Nonvolatile semiconductor memory device and method of reproducin

Static information storage and retrieval – Floating gate – Data security

Patent

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Details

36518528, 36518526, G11C 1604

Patent

active

059994487

ABSTRACT:
There is provided a nonvolatile semiconductor memory device which has a floating gate electrode and writes data by injecting electrons into the floating gate electrode by applying a voltage to a control gate electrode and erases the data by extracting the electrons from the floating gate electrode. The nonvolatile semiconductor memory device which includes a plurality of word lines, a plurality of bit lines intersecting with the plurality of word lines, and a plurality of memory elements each of which is connected to a word line and a bit line at a location where the word line and the bit line are intersected with each other, comprises at least one monitor bit line which intersects with the word lines, and a plurality of monitor elements which are connected to the monitor bit line and the plurality of word lines at locations where the monitor bit line and the plurality of word lines are intersected with each other.

REFERENCES:
patent: 5210716 (1993-05-01), Takada
patent: 5323351 (1994-06-01), Challa
patent: 5867429 (1999-02-01), Chen et al.

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