Nonvolatile semiconductor memory device and method of producing

Details Nonvolatile semiconductor memory device and method of producing Nonvolatile semiconductor memory device and method of producing

1995-07-07

1997-01-14

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular connection

36518501, 36518516, 327315, 327316, 327318, H01L 29788

Patent

active

055946887

ABSTRACT:
A nonvolatile semiconductor memory device has a semiconductor substrate of a first conductivity type, at least a pair of element isolation insulating films and a pair of spaced source/drawn regions of a second conductivity type different from the first conductivity type and formed in a surface of the semiconductor substrate. A floating gate electrode is formed above a channel region disposed between the pair of source/drain regions in the surface of the semiconductor substrate in an insulated relationship with the channel region. The floating gate electrode overlaps each of the element isolation insulating films and a gap is formed between an underside of the floating gate electrode and each of the element isolation insulating films at each of portions thereof where the floating gate electrode overlaps the pair of element isolation insulating films, respectively. A control gate electrode is formed above the floating gate electrode in an insulated relationship with the floating gate electrode. A part of the control gate electrode extends beyond a side of the floating gate electrode to an underside of the floating gate electrode facing each of the gaps.

REFERENCES:
patent: 4495693 (1985-01-01), Iwahashi et al.
Kynett et al., "An In-System Reprogrammable 32K.times.8 CMOS Flash Memory", IEEE Journal of Solid State Circuits, vol. 23, No. 5, Oct. 1988 pp. 1157-1163.
Kume et al., "A 1.28.mu.m.sup.2 Contactless Memory Cell Technology for a 3V Only 64M bit EEPROM", IEDM 92-991 pp. 24.7.1-24.7.3.

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