Nonvolatile semiconductor memory device and method of its manufa

Details Nonvolatile semiconductor memory device and method of its manufa Nonvolatile semiconductor memory device and method of its manufa

1978-01-30

1981-12-22

Wojciechowicz, Edward J.

Metal treatment

Stock

Ferrous

357 54, 357 91, 148 15, 29576R, H01L 2978

Patent

active

043074111

ABSTRACT:
An MNOS nonvolatile semiconductive memory device of the type which has a thick gate insulating layer overlapping the source and drain regions and a thin gate insulator layer in the memory portion of the device includes a region of relatively high concentration of impurities of the same type conductivity as the substrate in the portion of the channel which is beneath the thin gate insulating layer. This increases the values of both the low threshold and the high threshold states of the memory portion of the device so as to increase the threshold voltage window of the device.

REFERENCES:
patent: 3719866 (1973-03-01), Naber et al.
patent: 4011576 (1977-03-01), Uchida et al.

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