Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-02-06
2008-12-23
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185140, C365S185180, C365S185220
Reexamination Certificate
active
07468917
ABSTRACT:
In a nonvolatile semiconductor memory device, a memory cell array has a plurality of nonvolatile memory cells arranged in a matrix. A selecting section selects as selection memory cells, at least two of the plurality of nonvolatile memory cells from the memory cell array. A write section applies to the selection memory cells, a gate voltage which increases step by step, until a threshold voltage of each of the selection memory cells reaches a target threshold voltage, such that the threshold voltage increases step-by-step.
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NEC Electronics Corporation
Nguyen Hien N
Phung Anh
Sughrue & Mion, PLLC
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