Nonvolatile semiconductor memory device and method of...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S100000, C365S185030, C365S185200, C365S185210

Reexamination Certificate

active

11087734

ABSTRACT:
The nonvolatile semiconductor memory device of the present invention includes a memory cell array wherein data is stored in a nonvolatile state based on a difference in memory information between two memory cells comprising a memory cell pair, and a writing controller for writing data to the memory cell array. The writing controller is capable of individually setting memory information of each of the memory cells in the memory cell array.

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patent: 2001-43691 (2001-02-01), None
patent: 2002-25286 (2002-01-01), None

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