Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-04-24
2007-04-24
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S100000, C365S185030, C365S185200, C365S185210
Reexamination Certificate
active
11087734
ABSTRACT:
The nonvolatile semiconductor memory device of the present invention includes a memory cell array wherein data is stored in a nonvolatile state based on a difference in memory information between two memory cells comprising a memory cell pair, and a writing controller for writing data to the memory cell array. The writing controller is capable of individually setting memory information of each of the memory cells in the memory cell array.
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Uji Yuji
Urabe Katsutoshi
Nguyen Tan T.
Renesas Technology Corp.
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