Nonvolatile semiconductor memory device and method for...

Details Nonvolatile semiconductor memory device and method for... Nonvolatile semiconductor memory device and method for...

2008-04-29

2008-04-29

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

C438S129000, C438S130000, C438S275000, C438S278000, C438S290000, C257S314000, C257S315000, C257S390000, C257SE21688

Reexamination Certificate

active

11302203

ABSTRACT:
A method for manufacturing a nonvolatile semiconductor memory device having a step of forming a first gate electrode on a peripheral circuit portion and a second gate electrode on a memory cell portion, a step of introducing impurity into the peripheral circuit portion and memory cell portion, a step of forming a first insulating film above at least the memory cell portion, and a step of annealing the semiconductor substrate into which the impurity has been introduced. The first gate electrode has a first gate length. The second gate electrode has a second gate length shorter than the first gate length.

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