Nonvolatile semiconductor memory device and method for...

Static information storage and retrieval – Floating gate – Multiple values

Reexamination Certificate

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C365S189120

Reexamination Certificate

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11191963

ABSTRACT:
A semiconductor memory device includes: first and second bit cells for storing complementary data; a scan circuit for outputting a selected data signal; a bit-cell selector receiving the output of the scan circuit and selecting one of the bit cells; and a data write controlling circuit for controlling data writing. Write paths for all the bit cells for storing “0” are not selected and data is written only in a bit cell for storing “1”, so that write operation performed in steps is achieved.

REFERENCES:
patent: 6633499 (2003-10-01), Eitan et al.
patent: 7050347 (2006-05-01), Nishihara et al.
patent: 03-120759 (1991-05-01), None

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