Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2007-07-03
2007-07-03
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S204000, C257S288000, C257S315000
Reexamination Certificate
active
10860014
ABSTRACT:
A nonvolatile semiconductor memory device including at least one MOS transistor in a peripheral circuit comprises a semiconductor substrate, isolation insulating films for defining a plurality of element formation regions, each of the isolation insulating films being buried in an isolation trench provided in the semiconductor substrate, a floating gate provided in each of the element formation regions via a first gate insulating film, a control gate provided on the floating gate via a second gate insulating film, and source and drain regions provided in the semiconductor substrate in self-alignment with the control gate, wherein the floating gate is self-aligned at an isolation end in a direction of a channel width, and comprises a plurality of polysilicon films.
REFERENCES:
patent: 5104819 (1992-04-01), Freiberger et al.
patent: 5446299 (1995-08-01), Acovic et al.
patent: 5506159 (1996-04-01), Enomoto
patent: 5639679 (1997-06-01), Muramatsu
patent: 6144062 (2000-11-01), Mine et al.
patent: 6555427 (2003-04-01), Shimizu et al.
patent: 6570216 (2003-05-01), Rolandi
patent: 6943074 (2005-09-01), Kamiya et al.
patent: 2005/0184327 (2005-08-01), Ozawa
patent: 7-115144 (1995-05-01), None
patent: 9-36263 (1997-02-01), None
Toshitake Yaegashi et al., “Anomalous Diffusion of Dopant in Si Substrate during Oxynitride Process,” IEDM Tech. Dig. (1999), pp. 341-344.
F. Arai et al., “High-Density (4.4F2) NAND Flash Technology Using Super-Shallow Channel Profile (SSCP) Engineering,” IEDM Tech. Dig. (2000), pp. 775-778.
Hazama Hiroaki
Iizuka Hirohisa
Mori Seiichi
Narita Kazuhito
Ootani Norio
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Fourson George
Garcia Joannie Adelle
Kabushiki Kaisha Toshiba
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