Nonvolatile semiconductor memory device and data writing method

Details Nonvolatile semiconductor memory device and data writing method Nonvolatile semiconductor memory device and data writing method

1997-07-09

1999-09-28

Nelms, David

Static information storage and retrieval

Floating gate

Multiple values

36518518, 36518523, 36518905, G11C 1604

Patent

active

059598824

ABSTRACT:
In a nonvolatile semiconductor memory device wherein a plurality of threshold voltages are set so as to store multivalued information in one memory cell, data is first written into the memory cell whose threshold voltage is the lowest as a written state from the erase level, and data is successively written into memory cells whose threshold voltages are higher.

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