Nonvolatile semiconductor memory device and data writing...

Details Nonvolatile semiconductor memory device and data writing... Nonvolatile semiconductor memory device and data writing...

2005-06-14

2005-06-14

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Floating gate

Multiple values

C365S185010, C365S191000, C365S233100

Reexamination Certificate

active

06906952

ABSTRACT:
In a nonvolatile semiconductor memory device wherein a plurality of threshold voltages are set so as to store multivalued information in one memory cell, data is first written into the memory cell whose threshold voltage is the lowest as a written state from the erase level, and data is successively written into memory cells whose threshold voltages are higher.

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