Nonvolatile semiconductor memory device and data write...

Details Nonvolatile semiconductor memory device and data write... Nonvolatile semiconductor memory device and data write...

2005-10-11

2005-10-11

Lam, David (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185280, C365S185240

Reexamination Certificate

active

06954378

ABSTRACT:
A semiconductor integrated circuit device includes an nonvolatile semiconductor memory cell and a write control circuit. The write control circuit supplies first and second pre-programming pulses and staircase programming pulses to the memory cell independently of the write statuses thereof. The second pre-programming pulse is higher than the first pre-programming pulse by a first potential difference. The staircase programming pulses have an initial voltage lower than the second pre-programming pulse and increase the voltage at a rate of a second potential difference per pulse. The second potential difference is smaller than the first potential difference.

REFERENCES:
patent: 5555204 (1996-09-01), Endoh et al.
patent: 5682346 (1997-10-01), Yamamura et al.
patent: 5870334 (1999-02-01), Hemink et al.
patent: 6459621 (2002-10-01), Kawahara et al.
patent: 6567302 (2003-05-01), Lakhani
patent: 6643188 (2003-11-01), Tanaka et al.
G.J. Hemink et al., “Fast and Accurate Programming Method for Multi-Level Nand EEPROMS”, 1995 Symposium on VLSI Technology Digest of Technical Papers, pp. 129-130.
T. Tanaka et al., “A 3.4 Mbyte/sec Programming 3-Level NAND Flash Memory Saving 40% Die Size Per Bit”, 1997 Symposium on VLSI Technology Digest of Technical Papers, pp. 65-66.

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