Nonvolatile semiconductor memory device

Static information storage and retrieval – Magnetic bubbles – Guide structure

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357 54, 365185, H01L 2978, H01L 2934, G11C 1140

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active

051012499

ABSTRACT:
A nonvolatile semiconductor memory device comprising: a substrate, a pair of source and drain regions; a channel region between the source and drain regions; a pair of first and second insulating layers on the channel region, and a floating-gate or traps between the first and second insulating layer. The band gap of the first insulating layer increases gradually from the substrate to the floating gate or the traps.

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