Nonvolatile semiconductor memory device

Static information storage and retrieval – Floating gate – Data security

Patent

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Details

36518511, 365195, G11C 1134

Patent

active

056732228

ABSTRACT:
An electrically erasable and rewritable semiconductor memory device including at least one memory block, comprising: a WP signal generator for generating a WP signal for controlling protection of data stored in the memory block; a protect state setting section for setting a protect state for the memory block, the data stored in the memory block being protectable from erase/write operations when the protect state is set to the memory block; and a data protecting section for prohibiting the erase/write operations for the memory block to which the protect state is set, in the case where the WP signal is active. The WP signal generator includes: a WP set command identifying section for receiving a WP set command represented by at least one predetermined value selected from values of data and values of at least one address which are input in at least one bus cycle, and for identifying the WP set command by detecting the at least one predetermined value; and a generating section for activating the WP signal when the WP set command is identified during the WP signal is inactive.

REFERENCES:
patent: 5053990 (1991-10-01), Kreifels et al.
patent: 5245570 (1993-09-01), Fazio et al.
patent: 5249158 (1993-09-01), Kynett et al.
patent: 5363334 (1994-11-01), Alexander et al.
patent: 5381369 (1995-01-01), Kikuchi et al.
patent: 5506806 (1996-04-01), Fukushima

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