Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

1997-06-11

1999-02-09

Nelms, David

Static information storage and retrieval

Floating gate

Particular connection

36518519, 36518524, 36518529, 365218, G11C 1604

Patent

active

058703349

ABSTRACT:
In a nonvolatile semiconductor memory device including a memory cell array obtained by arranging, in a matrix manner, electrically programmable memory cells, each of which comprises stacking a charge storage layer and a control gate on a semiconductor layer through an insulating film, the threshold voltages of the memory cells are detected after erasing, and data are programmed in a fast programmable cell at a relatively low voltage and in a slow programmable cell at a relatively high voltage, thereby suppressing variations in threshold voltages after programming within the same period of programming time.

REFERENCES:
patent: 5278794 (1994-01-01), Tanaka et al.
patent: 5652719 (1997-07-01), Tanaka et al.

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1955689