Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

1997-08-28

1998-07-14

Nguyen, Tan T.

Static information storage and retrieval

Floating gate

Particular connection

36518512, 36518517, 36518518, 36518524, G11C 1600

Patent

active

057814783

ABSTRACT:
There is provided a non-volatile semiconductor memory device comprising: a memory cell array in which a plurality of memory cell units are arranged in a matrix form, the memory cell units each having a memory cell section and one or a plurality of select MOS transistors, the memory cell having one or a plurality of non-volatile memory cells, and the select MOS transistors allowing the memory cell section to be electrically conducted to a common signal line, wherein one end of each of the memory cell units is connected to a first common signal line in a state that the plurality of 2n (n.+-.2) memory cell units, sharing a word line, have a contact in common; and the other end of each of the memory cell units is connected to a second common signal line in a state that n memory cell units, sharing a word line and having no contact in common at one end of the memory cell unit, have a contact in common, and n memory cell units, sharing a contact at one end of the memory cell unit, have a contact in common.

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patent: 5568421 (1996-10-01), Aritome
patent: 5570315 (1996-10-01), Tanaka et al.
patent: 5652719 (1997-07-01), Tanaka et al.
patent: 5680347 (1997-10-01), Takeuchi et al.

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