Static information storage and retrieval – Floating gate – Particular connection
Patent
1997-11-07
1999-05-04
Hoang, Huan
Static information storage and retrieval
Floating gate
Particular connection
365200, 365201, 36518529, 36518518, G11C 1606
Patent
active
059010800
ABSTRACT:
A nonvolatile semiconductor memory device for storing data by introducing electrons into a floating gate through a tunneling oxide film under an electric field of a control gate includes a switching circuit for supplying a reference high voltage during a normal erase mode and a test bias voltage during a test mode. In the test mode, the switching circuit can create a status where a self-field is applied between the floating gate and the source, and makes it easy to find out cells that are deteriorated due to trapping of holes into the oxide film.
REFERENCES:
patent: 5086413 (1992-02-01), Tsuboi et al.
patent: 5406521 (1995-04-01), Hideki Hara
patent: 5420822 (1995-05-01), Kato et al.
patent: 5467306 (1995-11-01), Kaya et al.
patent: 5561635 (1996-10-01), Tada et al.
patent: 5576992 (1996-11-01), Mehrad
patent: 5590075 (1996-12-01), Mazzali
Hoang Huan
Kabushiki Kaisha Toshiba
LandOfFree
Nonvolatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1874670