Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

1985-06-19

1987-06-09

Munson, Gene M.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 2311, 357 54, 357 59, 357 91, 365185, H01L 2978, H01L 2934, H01L 2904, G11C 1140

Patent

active

046724095

ABSTRACT:
A nonvolatile semiconductor memory device including at least one memory cell which comprises a floating-gate, a control gate and a single impurity diffusion region formed exclusively for the memory cell. In this device, a small depletion region and a large depletion region due to the charged and discharged state of the floating-gate represent the information "1" and "0".

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patent: 4173766 (1979-11-01), Hayes
patent: 4375085 (1983-02-01), Grise et al.
patent: 4375086 (1983-02-01), van Velthoven
patent: 4375087 (1983-02-01), Wanlass
Kondo et al, "Dynamic Injection MNOS Memory Device" Proc. 11th Conf (1979 Int.) Solid State Devices, pp. 231-237.
Larsen et al, "Floating-Gate Device with Dual Control Gate" IBM Technical Disclosure Bulletin, vol. 21 (1/79) p. 3368.
Fowler, "Switchable Diode with Control Electrode" IBM Technical Disclosure Bulletin, vol. 16 (8/73) pp. 870-871.

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