Nonvolatile, semiconductor memory device

Details Nonvolatile, semiconductor memory device Nonvolatile, semiconductor memory device

1987-06-22

1989-03-28

Edlow, Martin H.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 42, 365185, H01L 2978, H01L 2702, G11C 1134

Patent

active

048168831

ABSTRACT:
A nonvolatile, EPROM type memory cell, formed using a p-channel MOS device instead of an n-channel MOS device as customary according to the prior art, offers several advantages: improved programming characteristics, a relatively low gate voltage for writing, a lower power dissipation and above all compatability with the great majority of CMOS fabrication processes. An explanation of such surprising characteristics may be attributed to more favorable conditions of electric field during programming, i.e. during charging of the floating gate, in respect to those existing in the case of the conventional n-channel memory cell.

REFERENCES:
patent: 4016588 (1977-04-01), Ohya et al.
patent: 4686558 (1987-08-01), Adam

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