Nonvolatile semiconductor memory device

Static information storage and retrieval – Floating gate – Particular connection

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Details

36518518, 257315, 257316, 257324, G11C 1604

Patent

active

059177519

ABSTRACT:
A nonvolatile semiconductor memory device includes a memory cell array in which memory cells constituted by semiconductor storage elements are divided into a plurality of memory cell blocks each having a common source line and a common digit line, a peripheral circuit for addressing the memory cells and outputting data from the memory cells, a data detecting circuit for detecting, for each memory cell block, the presence/absence of a semiconductor storage element in which the threshold voltage of a transistor constituting the memory cell is the ground potential or less, and a source potential setting circuit capable of changing the source potential setting condition of each memory cell block in accordance with the detection result from the data detecting circuit.

REFERENCES:
patent: 5357473 (1994-10-01), Mizuno et al.
patent: 5496753 (1996-03-01), Sakurai et al.
patent: 5793081 (1998-08-01), Tomioka et al.

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