Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

1998-09-10

2000-09-12

Nelms, David

Static information storage and retrieval

Floating gate

Particular connection

26518904, G11C 1134

Patent

active

061186953

ABSTRACT:
A nonvolatile memory increases the number of times that data can be written and the length of time that data can be stored. A feature of the memory sets as a high reliability region a specific memory sector (for example, "0000" to "00FF") among a plurality of memory sectors. Within the high reliability sector, two or more memory cells are simultaneously written with the same data. During reading, the simultaneously written memory cells are read simultaneously, increasing current flow through the parallel current paths.

REFERENCES:
patent: 4691298 (1987-09-01), Fukuda et al.
patent: 5349552 (1994-09-01), Zampaglione
patent: 5867443 (1999-02-01), Linderman
patent: 5880991 (1999-03-01), Hsu et al.
patent: 5917752 (1999-06-01), Seki et al.

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