Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

1995-06-29

1997-10-21

Nguyen, Viet Q.

Static information storage and retrieval

Floating gate

Particular connection

36518505, 36518512, 36518523, 36518524, 36523003, G11C 1140, G11C 1700

Patent

active

056803478

ABSTRACT:
A nonvolatile semiconductor memory device comprises a memory cell array in which a plurality of memory cell units are arranged in a matrix, and a first and second common signal lines for exchanging signals with the memory cell array, wherein each of the memory cell units contains a nonvolatile memory section having at least one nonvolatile memory cell, a first select MOS transistor for making the nonvolatile memory section conducting to the first common signal line, and a second select MOS transistor with a threshold voltage different from that of the first select MOS transistor for making the nonvolatile memory section conducting to the second common signal line.

REFERENCES:
patent: 4959812 (1990-09-01), Momodomi et al.
patent: 4980861 (1990-12-01), Herdt et al.
patent: 5355332 (1994-10-01), Endoh et al.
patent: 5392238 (1995-02-01), Kirisawa
patent: 5541879 (1996-07-01), Suh et al.
patent: 5555204 (1996-09-01), Endoh et al.

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