Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge injection device
Patent
1993-03-17
1995-12-19
Nguyen, Viet Q.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge injection device
365182, 36518518, 257314, 257315, 257316, 257319, 257320, 257366, H01L 29788
Patent
active
054770688
ABSTRACT:
A pair of impurity regions are formed at a specified interval in a semiconductor substrate. A channel region is defined between the impurity regions. A select gate is provided on the channel region, and a sidewall for holding electric charge is provided along a side of the select gate. A tunnel insulating film is interposed between the sidewall for holding electric charge and the channel region. An insulating film covers the sidewall for holding electric charge. A control gate is provided on the insulating film lying over the sidewall. In such a structure, since the select gate can have a large cross-sectional area, speed-up of the reading can be attained.
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Nikkei Microdevices, May 1990, pp. 72-77.
Nguyen Viet Q.
Rabin Steven M.
Rohm & Co., Ltd.
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