Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2008-05-28

2011-12-06

Phan, Trong (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185180, C365S185190, C365S185240, C365S185290, C365S200000

Reexamination Certificate

active

08072808

ABSTRACT:
A memory cell array including at least one memory cell, an address storage section containing address information, an address judging circuit for judging whether an input address matches the address information in the address storage section and outputting a result of the judgment, and a write or erase voltage generation circuit for generating a write or erase voltage to be applied to the memory cell are provided. The write or erase voltage generation circuit receives the output result from the address judging circuit and changes a write or erase voltage.

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