Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2007-06-05

2010-11-16

Nguyen, Dang T (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S226000

Reexamination Certificate

active

07835185

ABSTRACT:
A nonvolatile semiconductor memory device in accordance with the present invention is provided with a plurality of memory cells of field effect transistor type, a source bias control circuit, and a drain bias control circuit. The source bias control circuit variably sets the potential of a source line connected in common to the sources of the plurality of memory cells at the time of write operation. The drain bias control circuit variably sets the potential of the drains of the plurality of memory cells at the time of write operation according to the potential of the source line.

REFERENCES:
patent: 5838626 (1998-11-01), Nakayama
patent: 2001/0053095 (2001-12-01), Jinbo
patent: 2006/0262628 (2006-11-01), Nii et al.
patent: 2006/0273374 (2006-12-01), Kobayashi et al.
patent: 2007/0247893 (2007-10-01), Bednorz et al.
patent: 2000-276882 (2000-10-01), None
patent: 2003-507834 (2003-02-01), None

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