Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2006-09-25

2009-11-24

Le, Vu A (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185010, C365S185330

Reexamination Certificate

active

07623380

ABSTRACT:
A nonvolatile semiconductor memory device for storing data by accumulating charge in a floating gate includes a plurality of MOS transistors sharing the floating gate. In the device, a PMOS is used for coupling during writing and an n-type depletion MOS (DMOS) is used for coupling during erasure. Coupling of channel inversion capacitance by the PMOS is used for writing and coupling of depletion capacitance by the n-type DMOS is used for erasure, thereby increasing the erase speed without increase of area, as compared to a conventional three-transistor nonvolatile memory element.

REFERENCES:
patent: 5301150 (1994-04-01), Sullivan et al.
patent: 5844300 (1998-12-01), Alavi et al.
patent: 6191980 (2001-02-01), Kelley et al.
patent: 6214666 (2001-04-01), Mehta
patent: 6232631 (2001-05-01), Schmidt et al.
patent: 6326663 (2001-12-01), Li et al.
patent: 6570212 (2003-05-01), Mehta et al.
patent: 2006/0067124 (2006-03-01), Lee et al.
patent: 2006/0209598 (2006-09-01), Wang et al.
patent: 2007/0247915 (2007-10-01), Kalnitsky et al.
Richard J. McPartland, et al., “1.25 Volt, Low Cost, Embedded Flash Memory for Low Density Applications”, 2000 Symposium on VLSI Circuits Digest of Technical Papers, pp. 158-161.

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4068059