Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2006-12-12
2008-11-11
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185180, C365S185230, C365S185240
Reexamination Certificate
active
07450417
ABSTRACT:
There is provided a nonvolatile semiconductor memory device capable of accelerating writing time and avoiding readout errors of information by eliminating variation in threshold voltage of unselected memory cells. In a nonvolatile semiconductor memory device having a memory cell array with memory cells capable of erasing and programming information, the memory cells store one data value selected from the same number of data values as programming distribution ranges, associated with that the electrical attribute belongs to any one of the more than one programming distribution ranges. The device comprises an erasure means for erasing the selected memory cell to be erased so that its electrical attribute belongs to a erasure distribution range not overlapping any of the programming distribution ranges and a programming means for programming an erased memory cell to be programmed so that its electrical attribute belongs to any one of the programming distribution ranges.
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Kaneko Seiji
Ueda Naoki
Harness Dickey & Pierce PLC
Pham Ly D
Sharp Kabushiki Kaisha
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