Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2008-01-08

2008-01-08

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185280, C365S185180

Reexamination Certificate

active

11340686

ABSTRACT:
The programming speed of a nonvolatile semiconductor memory device used as a flash memory is increased as follows. First, second, and third assist gates, a control gate, as well as first and second storage nodes are created over a p-type well. In the course of a programming operation, first of all, the p-type well is set at 0V. Then, a first inversion layer created by setting the first assist gate at a voltage A is set at a voltage B and the second assist gate is set at a voltage C. Subsequently, a second inversion layer created by setting the third assist gate at a voltage D is set at a voltage E and the control gate is set at a voltage F to inject hot electrons generated on the surface of the p-type well in close proximity to the second assist gate into the second storage node.

REFERENCES:
patent: 5455792 (1995-10-01), Yi
patent: 5856943 (1999-01-01), Jeng
patent: 5943261 (1999-08-01), Lee
patent: 6034892 (2000-03-01), Choi
patent: 6246612 (2001-06-01), Van Houdt et al.
patent: 2004/0084714 (2004-05-01), Ishii et al.
patent: 2004-152977 (2004-05-01), None
H. Kurata et al., “Self-Boosted Charge Injection for 90-nm-Node 4-Gb Multilevel AG-AND Flash Memories Programmable at 16MB/s,” 2004 Symposium on VLSI Circuits Digest of Technical Papers, pp. 72-73.

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