Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2007-10-23

2007-10-23

Pham, Ly Duy (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185080, C365S222000, C365S230030, C365S230080, C365S236000

Reexamination Certificate

active

11002794

ABSTRACT:
Disclosed here is a nonvolatile semiconductor memory device used to prevent data loss that might occur in unselected memory cells due to a disturbance that might occur during programming/erasing in/from those memory cells. In the nonvolatile semiconductor memory device, the number of programming/erasing operations performed in a data storage block over a programming/erasing unit of the subject nonvolatile memory is recorded in an erasing/programming counter EW CT provided in each data storage block. When the value of the erasing/programming counter reaches a predetermined value, the data storage block corresponding to the erasing/programming counter is refreshed. In the refreshing operation, the data in the data storage block is stored in a temporary storing region provided in the data storage block, then the data in a temporary storing region of the data storage area is erased and the data stored temporarily is programmed in the data storage block again.

REFERENCES:
patent: 5969383 (1999-10-01), Change et al.
patent: 6005810 (1999-12-01), Wu
patent: 6160738 (2000-12-01), Atsumi et al.
patent: 6240032 (2001-05-01), Fukumoto
patent: 6266276 (2001-07-01), Odani
patent: 6522586 (2003-02-01), Wong
patent: 6570790 (2003-05-01), Harari
patent: 2004/0047205 (2004-03-01), Hazama et al.
patent: 2004/0213035 (2004-10-01), Cavaleri et al.
patent: 6-215584 (1994-08-01), None
Y. Kamigaki et al., “MNOS Nonvolatile Semiconductor Memory Technology: Present and Future,” IEICE Trans. Electron., vol. E84-C, No. 6, pp. 713-723, (Jun. 2001).

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