Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2007-08-28

2007-08-28

Mai, Son L. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185100, C257S315000, C257S316000

Reexamination Certificate

active

11388056

ABSTRACT:
A nonvolatile semiconductor memory device including: a first capacitor, one end of the first capacitor being connected to a floating node; a detection transistor, a gate electrode of the detection transistor being connected to the floating node; a second capacitor, one end of the second capacitor being connected to the floating node, and the other end of the second capacitor being connected to a drain of the detection transistor; and an auxiliary capacitor, one end of the auxiliary capacitor being connected to the floating node, wherein, at least during write operation, a control gate voltage is supplied to the other end of the first capacitor, a control drain voltage is supplied to the other end of the second capacitor, and a capacitance ratio correction voltage which is higher than a voltage of the floating node is supplied to the other end of the auxiliary capacitor.

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