Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2007-08-21

2007-08-21

Ho, Tu-Tu V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S063000, C257S646000, C257SE29003, C257SE45003, C365S148000

Reexamination Certificate

active

11035592

ABSTRACT:
A nonvolatile memory element is formed by layering a lower electrode, a variable resistor and an upper electrode in sequence. The variable resistor is formed in which crystallinity and amorphism are mixed. Thus, the nonvolatile memory element is formed. More preferably, the variable resistor is a praseodymium-calcium-manganese oxide represented by a general formula, Pr1-xCaxMnO3, that has been formed at a film forming temperature from 350° C. to 500° C. Alternatively, the variable resistor is formed as a film at a film forming temperature that allows the variable resistor to become of an amorphous state or a state where crystallinity and amorphism are mixed and, then, is subjected to an annealing process at a temperature higher than the film forming temperature, in a temperature range where the variable resistor can maintain the state where crystallinity and amorphism are mixed.

REFERENCES:
patent: 6204139 (2001-03-01), Liu et al.
patent: 6316131 (2001-11-01), Saboungi et al.
patent: 6473332 (2002-10-01), Ignatiev et al.
patent: 6583003 (2003-06-01), Hsu et al.
patent: 2003/0148545 (2003-08-01), Zhuang et al.
patent: 2003/0156445 (2003-08-01), Zhuang et al.
patent: 2004/0160804 (2004-08-01), Rinerson et al.
patent: 2004/0180542 (2004-09-01), Nagashima et al.
patent: 1 335 417 (2003-08-01), None
European Search Report completed on May 17, 2005 for EP Patent Application No. 05250075, 3 pages.

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3827613